RBR3L60A Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBR3L60A
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Low V_F
12
1.5±0.2
0.1±0.02
2.0±0.2
PMDS
lStructure
Cathode
ROHM : PMDS
JEDEC : SOD-106
1
2 : Manufacture Date
lConstruction
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
2.0±0.05
4.0±0.1
fφ 1.55±0.05
Anode
0.3
2.9±0.1
4.0±0.1
fφ 1.55
2.8MAX
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
60
V
Reverse voltage
V_R
Direct reverse voltage
60
V
Average forward rectified current
I_o
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , T_c=70ºC Max.
3
A
Non-repetitive forward current surge peak I_FSM
60Hz half sin wave, one cycle,
non-repetitive at T_a=25ºC
40
A
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Conditions
I_F=3.0A
V_R=60V
Min. Typ. Max. Unit
-
- 0.66 V
-
- 100 mA
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2015.03 - Rev.A