RBR30T40ANZ Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBR30T40ANZ
Application
General rectification
Dimensions (Unit : mm)
4.5±^00..31
10.0±^00..31
φ3.2±0.2
2.8±^00..21
Datasheet
Structure
Features
1) Cathode common dual type
1
2) High reliability
1.2
3) Low V_F
1.3
0.8
2.6±0.5
Construction
Silicon epitaxial planar type
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
0.75±_00..015
1 : Manufacture date
(1)
(2)
(3)
Anode Cathode Anode
Package Dimensions (Unit : mm)
7
540
Absolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
V_RM
Reverse Voltage
V_R
Average Forward Rectified Current I_o
Non-repetitive Forward Current Surge Peak I_FSM
Operating Junction Temperature
T_j
Storage Temperature
T_stg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
I_O/2 per diode, T_c=95°C Max.
60Hz half sin wave, Non-repetitive at
T_a=25°C, 1cycle, per diode
-
-
Limits Unit
40
V
40
V
30
A
100
A
150
°C
55 to 150 °C
Electrical and Thermal Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Forward Voltage
V_F
I_F=15A
Reverse Current
I_R
V_R=40V
Thermal Resistance
R_th(j-c)
Junction to Case
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1/5
Min. Typ. Max. Unit
-
- 0.62 V
-
- 360 A
-
-
2 °C/W
2016.08 - Rev.A