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| RBR30NS30A Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode | |||
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Schottky Barrier Diode
RBR30NS30A
Data Sheet
lApplication
Switching power supply
lDimensions (Unit : mm)
(2)
lFeatures
1) Cathode common dual type
2) High reliability
3) Low VF
BR30NS
30A
1
(1)
(3)
lLand size figure (Unit : mm)
11
9.9
2.5
2.54
TO-263S
lStructure
2.54
(2) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83
1 : Manufacture date
lTaping Dimensions (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRM
Reverse Voltage
VR
Average Forward Rectified Current Io
Non-repetitive Forward Current Surge Peak IFSM
Operating Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Dutyâ¦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=110°C Max.
60Hz half sin wave, Non-repetitive at
Ta=25°C, 1cycle, per diode
-
-
Limits Unit
30
V
30
V
30
A
100
A
150
°C
-55 to +150 °C
lElectrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Forward Voltage
VF
IF=15A
Reverse Current
IR
VR=30V
Thermal Resistance
Rth(j-c)
Junction to Case
Min. Typ. Max. Unit
-
- 0.55 V
-
- 300 mA
-
-
2 °C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.02 - Rev.A
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