RBR10NS40A Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBR10NS40A
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common dual type
2) High reliability
3) Low V_F
lDimensions (Unit : mm)
(2)
BR10NS
40A
1
(1)
(3)
lLand size figure (Unit : mm)
11
9.9
2.5
2.54
2.54
TO-263S
lStructure
(2) Cathode
lConstruction
Silicon epitaxial planar type
ROHM : TO-263S JEITA : SC-83
①1 _{: Manufacture date}
lTaping specifications (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
40
V
Reverse voltage
V_R
Average forward rectified current
I_o
Non-repetitive forward current surge peak I_FSM
Operating junction temperature
T_j
Direct reverse voltage
60Hz half sin wave, resistive load,
I_O/2 per diode, T_c=130ºC Max.
60Hz half sin wave, Non-repetitive at
T_a=25ºC , 1cycle
-
40
V
10
A
50
A
150
°C
Storage temperature
T_stg
-
-55 to +150 °C
lElectrical l and Thermal Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
V_F
I_F=5A
-
- 0.62 V
Reverse current
I_R
V_R=40V
-
- 120 mA
Thermal resistance
R_th(j-c)
Junction to case
-
-
2 °C/W
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2015.10 - Rev.A