 English |
|
|
|
|
|
|
|
| RBR10BM40A Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode | |||
| |||
|
Schottky Barrier Diode
RBR10BM40A
lApplication
General rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Low VF
1
1.6
1.6
TO-252
2.3 2.3
ROHM : TO-252
JEITA : SC-63
1 : Manufacture date
lStructure
Cathode
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
Anode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRM
Reverse Voltage
VR
Average Forward Rectified Current Io
Non-repetitive Forward Current Surge Peak IFSM
Operating Junction Temperature
Tj
Storage Temperature
Tstg
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Thermal Resistance
Rth(j-c)
Conditions
Dutyâ¦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=90°C Max.
60Hz half sin wave, one cycle,
Non-repetitive at Ta=25°C
-
-
Limits Unit
40
V
40
V
10
A
50
A
150
°C
-55 to +150 °C
Conditions
IF=5A
VR=40V
Junction to Case
Min. Typ. Max. Unit
-
- 0.62 V
-
- 120 mA
-
-
6 °C/W
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.02 - Rev.A
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese