RBQ30T65A Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RBQ30T65A
lApplications
General rectification
lFeatures
1)Cathode common type.
2)Low I_R
3)High reliability
lDimensions (Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
lConstruction
Silicon epitaxial planer
①
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
① Manufacture Date
lStructure
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Reverse voltage (repetitive)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz・1cyc)
Junction temperature
I_FSM
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits
65
65
30
100
150
-40 to +150
lElectrical characteristics (Tj=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
Reverse current
V_F
-
I_R
-
-
0.69
-
450
Unit
V
V
A
A
°C
°C
Unit
Conditions
V
I_F=15A
μA
V_R=65V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A