RBQ30NS65A_15 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBQ30NS65A
lApplication
General rectification
lDimensions (Unit : mm)
Datasheet
lLand size figure (Unit : mm)
lFeatures
1) Cathode common dual type
(LPDS)
2) Low I_R
BQ30NS
65A
1
lConstruction
Silicon epitaxial planar
ROHM : LPDS
JEITA : TO263S
1 Manufactuare Year, Week and Day
lTaping specifications (Unit : mm)
LPDS
lStructure
Cathode
Anode Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
V_RM
65
Reverse voltage (DC)
V_R
65
Average rectified forward current (*1)
Io
30
Forward current surge peak (60Hz・1cyc) (*2) I_FSM
100
Junction temperature
Tj
150
Storage temperature
Tstg
-40 to +150
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Symbol Min.
V_F
-
I_R
-
Typ. Max.
- 0.69
- 0.45
Unit
V
V
A
A
°C
°C
Unit
Conditions
V I_F=15A
mA V_R=65V
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2013.06 - Rev.B