RBQ30NS65A Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBQ30NS65A
lApplications
General rectification
　　lDimensions (Unit : mm)
lFeatures
1)Cathode Common Dual type.(LPDS)
2)Low I_R.
BQ30NS
65A
①
Data Sheet
　 lLand size figure (Unit : mm)
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
lTaping dimensions (Unit : mm)
lStructure
①②③
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
Reverse voltage (DC)
V_RM
65
VR
65
Average rectified forward current (*1)
Io
30
Forward current surge peak (60Hz・1cyc) (*2)
I_FSM
100
Junction temperature
Tj
150
Storage temperature
Tstg
-40 to +150
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics (Tj=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F
-
- 0.69
I_R
-
- 0.45
Unit
V
V
A
A
°C
°C
Unit
V
I_F=15A
mA VR=65V
Conditions
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2011.11 - Rev.A