RBQ30NS45B Datasheet, PDF (1/7 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBQ30NS45B
Data Sheet
lApplication
Switching power supply
lFeatures
1) Power Mold Type
2) High reliability
3) Low I_R
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
(2)
BQ30NS
45B
1
lLand size figure (Unit : mm)
11
9.9
2.5
(1)
(3)
2.54
2.54
TO-263S
ROHM : TO-263S
JEITA : SC-83
1 : Manufacture date
lTaping Dimensions (Unit : mm)
lStructure
Cathode
(2)
(1)
(3)
No connected Anode
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Repetitive peak reverse voltage
V_RM
Reverse voltage
V_R
Average forward rectified current
I_o
Non-repetitive forward current surge peak I_FSM
Operating junction temperature
T_j
Storage temperature
T_stg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
T_c=100°C Max.
60Hz half sin wave, Non-repetitive at
T_a=25°C, 1cycle,
-
-
Limits Unit
45
V
45
V
30
A
100
A
150
°C
-55 to +150 °C
lElectrical and Thermal Characteristics (T_j = 25°C)
Parameter
Symbol
Conditions
Forward voltage
V_F
I_F=30A
Reverse current
I_R
V_R=45V
Thermal resistance
R_th(j-c)
Junction to case
Min. Typ. Max. Unit
- 0.53 0.59 V
- 100 350 mA
-
-
2 °C/W
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2016.09 - Rev.A