RBQ30NS45A_15 Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBQ30NS45A
Application
General rectification
Dimensions (Unit : mm)
(2)
Features
1) Cathode common dual type
(LPDS)
2) Low I_R
BQ30NS
45A
1
(1)
(3)
Datasheet
Land size figure (Unit : mm)
LPDS
Structure
Cathode
Construction
Silicon epitaxial planar
ROHM : LPDS
JEITA : TO263S
1 Manufactuare Year, Week and Day
Taping specifications (Unit : mm)
Anode Anode
Absolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
V_RM
45
Reverse voltage (DC)
V_R
45
Average rectified forward current (*1)
Io
30
Forward current surge peak (60Hz・1cyc) (*2) I_FSM
100
Junction temperature
Tj
150
Storage temperature
Tstg
40 to 150
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
Electrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Symbol Min.
V_F
-
I_R
-
Typ. Max.
- 0.65
- 0.45
Unit
V
V
A
A
°C
°C
Unit
Conditions
V I_F=15A
mA V_R=45V
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2016.11 - Rev.C