RBQ20T45ANZ Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBQ20T45ANZ
lApplication
General rectification
lFeatures
1) Cathode common type.
2) Low I_R
3) High reliability
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
10.0±0.3
　　　 0.1
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
1
1.2
1.3
0.8
(1) (2) (3)
ROHM TO220FN
1 _{Manufacture Date}
0.7±0.1
0.05
2.6±0.5
lPackage Dimensions (Unit : mm)
7
540
Data Sheet
lStructure
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
45
V
Reverse voltage (DC)
V_R
45
V
Average rectified forward current (*1)
Io
20
A
Forward current surge peak (60Hz・1cyc) I_FSM
100
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
(*1) Rating of per diode : Io/2
lElectrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Symbol Min.
V_F
-
I_R
-
Typ. Max.
- 0.65
- 300
Unit
Conditions
V I_F=10A
mA ^V_R^=45V
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2016.09 - Rev.A