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| RBQ20BM65A Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode | |||
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Schottky Barrier Diode
RBQ20BM65A
lApplication
General rectification
lDimensions (Unit : mm)
(2)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Low IR
1
(1)
2
(3)
ROHM : TO-252
JEITA : SC-63
1 : Manufacture date
2 : Serial number
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
1.6
1.6
TO-252
2.3 2.3
lStructure
(2) Cathode
(1) Anode (3) Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
VRM
Reverse Voltage
VR
Average Forward Rectified Current Io
Non-repetitive Forward Current Surge Peak IFSM
Operating Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Dutyâ¦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=54°C Max.
60Hz half sin wave, non-repetitive at
Ta=25°C, 1cycle, per diode
-
-
Limits Unit
65
V
65
V
20
A
100
A
150
°C
-55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=10A
VR=65V
Min. Typ. Max. Unit
-
- 0.63 V
-
- 450 mA
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© 2016 ROHM Co., Ltd. All rights reserved.
1/4
2016.06 - Rev.A
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