RBQ10T65ANZ Datasheet, PDF (1/9 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBQ10T65ANZ
lApplication
General rectification
lFeatures
1) Cathode common type.
2) Low I_R
3) High reliability
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
4.5±^00..31
10.0±^00..31
φ3.2±0.2
2.8±^00..21
①
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±_00..015
ROHM : TO220FN
① : Manufacture date
Data Sheet
lStructure
(1) (2) (3)
Anode Cathode Anode
lPackage Dimensions (Unit : mm)
7
540
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
65
V
Reverse voltage (DC)
V_R
65
V
Average rectified forward current (*1)
Io
10
A
Forward current surge peak (60Hz・1cyc) I_FSM
50
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
(*1) Rating of per diode : Io/2
lElectrical characteristics (Tj = 25°C)
Parameter
Forward voltage
Reverse current
Symbol Min.
V_F
-
I_R
-
Typ. Max.
- 0.69
- 150
Unit
Conditions
V I_F=5A
mA ^V_R^=65V
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2016.09 - Rev.A