RBQ10T65A Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RBQ10T65A
lApplications
General rectification
lFeatures
1)Cathode common type.
2)Low I_R
3)High reliability
lConstruction
Silicon epitaxial planer
lDimensions (Unit : mm)
10.0±0.3
　　　 0.1
lStructure
4.5±0.3
　　　 0.1
2.8±0.2
　　　 0.1
①
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : TO220FN
① _{Manufacture Date}
2.6±0.5
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
65
V
Reverse voltage (DC)
V_R
65
V
Average rectified forward current (*1)
Io
10
A
Forward current surge peak （60Hz・1cyc）
I_FSM
50
A
Junction temperature
Tj
150
C
Storage temperature
Tstg
-40 to +150
C
(*1) Rating of per diode : Io/2
lElectrical characteristics (Tj=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
V_F
-
- 0.69
V
I_F=5A
I_R
-
- 150
mA
V_R=65V
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2011.11 - Rev.A