RBQ10NS65A Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBQ10NS65A
lApplications
General rectification
lDimensions(Unit : mm)
lGeneral rectification
1)Cathode Common Dual type.（LPDS）
2)Low I_R.
BQ10NS
65A _①
Data Sheet
lLand size figure (Unit : mm)
lConstruction
Silicon epitaxial planer
ROHM : LPDS
lStructure
JEITA : TO263S
① Manufacture Year, Week and Day
① ②③
lTaping dimensions（Unit : mm）
●Absolute maximum ratings(Tc=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
V_RM
65
Reverse voltage (DC)
V_R
65
Average rectified forward current (*1)
Io
10
Forward current surge peak (60Hz・1cyc)(*2)
I_FSM
50
Junction temperature
Tj
150
Storage temperature
Tstg
-40 to +150
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V_F
I_R
Min. Typ. Max.
-
- 0.69
-
- 0.15
Unit
V
V
A
A
°C
°C
Unit
Conditions
V
I_F=5A
mA VR=65V
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2011.11 - Rev.A