RBQ10NS45A Datasheet, PDF (1/5 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBQ10NS45A
lApplications
General rectification
lDimensions（Unit : mm）
lFeatures
1)Cathode Common Dual type.(LPDS)
2)Low I_R.
BQ10NS
45A _①
Data Sheet
lLand size figure (Unit : mm)
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① _{Manufacture Year, Week and Day}
lTaping dimensions (Unit : mm)
lStructure
①② ③
lAbsolute maximum ratings(Tc=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current (*1)
Io
Forward current surge peak （60Hz・1cyc) (*2)
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
Limits
45
45
10
50
150
-40 to +150
lElectrical characteristics（Tj=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
-
0.65
I_R
-
-
0.15
Unit
V
V
A
A
°C
°C
Unit
Conditions
V
I_F=5A
mA
V_R=45V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A