RBQ10BM45A Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RBQ10BM45A
lApplication
General rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Low I_R
1
2
1.6
1.6
TO-252
2.3 2.3
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
2 : Serial number
lStructure
(2) Cathode
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
(1) Anode (3) Anode
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
V_RM
Duty≦0.5
45
V
Reverse Voltage
V_R
Direct Reverse Voltage
45
V
Average Forward Rectified Current
I_o
Glass epoxy board mounted, 60Hz half sin Wave,
resistive load, , T_c=100°C Max.
10
A
Non-repetitive Forward Current Surge Peak I_FSM
60Hz half sin wave,
Non-repetitive at T_a=25°C, 1cycle
50
A
Operating Junction Temperature
T_j
-
150
°C
Storage Temperature
T_stg
-
-40 to +150 °C
lElectrical Characteristics (T_j = 25°C)
Parameter
Symbol
Forward Voltage
V_F
Reverse Current
I_R
Conditions
I_F=5A
V_R=45V
Min. Typ. Max. Unit
-
- 0.65 V
-
- 0.15 mA
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2016.04 - Rev.B