RB886Y Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB886Y
RB886Y
zApplications
High frequency detection
zFeatures
1) Ultra small mold type. (EMD4)
2) Low Ct and high detection efficiency.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
1.6±0.1
0.22±0.05
(4)
(3)
0.13±0.05
zLand size figure (Unit : mm)
0.5
0～0.1
(1)
(2)
0.5
0.5
1.0±0.1
0.5±0.05
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
zTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
　　　　　 0
1.0
EMD4
zStructure
0.3±0.1
1.65±0.1
1PIN
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage
V_R
Forward current
I_F
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rate of per diode
Limits
15
10
125
-40 to +125
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse currnt
V_F
-
- 0.35
I_R
-
-
120
Capacitance between terminals Ct
-
0.53 0.80
φ0.8±0.1
Unit
V
mA
℃
℃
0.65±0.1
Unit
Conditions
V
I_F=1mA
µA
V_R=5V
pF
V_R=1.0V , f=1MHz
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