RB886G_05 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB886G
RB886G
zApplications
High frequency detection
zFeatures
1) Small mold type. (VMD2)
2) Low Ct and high detection efficiency.
zExternal dimensions (Unit : mm)
0.6±0.05
0.13±0.03
zLand size figure (Unit : mm)
0.5
zConstruction
Silicon epitaxial planar
0.27±0.03
0.5±0.05
ROHM : VMD2
dot (year week factory)
zTaping specification (Unit : mm)
4±0.1
2±0.05
φ1.5+0.1
　　　　　0
VMD2
zStructure
0.18±0.05
0.76±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage
V_Rm
Reverse voltage
V_R
Forward current
I_F
Junction temperature
Tj
Storage temperature
Tstg
4±0.1
Limits
15
5
10
125
-40 to +125
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
- 0.35
Reverse current
I_R
-
-
120
Capacitance between terminals
Ct
-
0.53 0.8
2±0.05
φ0.5
Unit
V
V
mA
℃
℃
0.3
0.65±0.05
Unit
Conditions
V
I_F=1mA
µA
V_R=5V
pF
V_R=1V , f=1MHz
Rev.A
1/2