RB886G Datasheet, PDF (1/2 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB886G
RB886G
!Applications
High frequency detection
!Features
1) Small mold type. (VMD2)
2) Low Ct and high detection efficiency.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
0.6±0.05
0.27±0.03
CATHODE MARK
0.13±0.03
ROHM : VMD2
EIAJ : −
JEDEC : −
0.5±0.05
!Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature
Symbol
VR
IF
Tj
Tstg
Limits
Unit
5.0
V
10
mA
125
°C
−40~+125
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminal
CT
∗ Please pay attention to static electricity when handling.
Min.
−
−
−
Typ.
−
−
0.53
Max.
0.35
120
0.80
Unit
Conditions
V
IF=1.0mA
µA VR=5.0V
pF VR=1.0V, f=1.0MHz
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