RB886CS Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB886CS
RB886CS
zApplications
High frequency detection
zFeatures
1) Ultra small mold type. (VMN2)
2) Low Ct and high detection efficiency.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
0.6±0.05
0.16±0.05
0.55
0.156
0.35±0.1
0.37±0.03
ROHM : VMN2
dot (year week factory) + day
VMN2
zStructure
zTaping specifications (Unit : mm)
4±0.1
2±0.05
φ1.55
0.2±0.05
φ0.5
0.7±0.05
2±0.05
4.0±0.1
0.52
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage
V_R
5.0
V
Average rectified forward current I_F
10
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
- 0.35
Reverse current
I_R
-
-
120
Capacitance between terminals
Ct
-
0.53 0.80
Unit
Conditions
V
I_F=1.0mA
µA
V_R=5.0V
pF
V_R=1.0V , f=1MHz
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