RB876W Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB876W
RB876W
!Applications
High frequency detection
!Features
1) Ultra small mold type. (EMD3)
2) Low Ct and high detection efficiency.
!Construction
Silicon epitaxial planar
!External dimensions (Units : mm)
1.6±0.2
1.0±0.1
0.5 0.5
(1) (2)
0.2±
0.1
0.05
0.7±0.1
0.55±0.1
0.1 Min.
0∼0.1
ROHM : EMD3
EIAJ :
JEDEC :
(3)
0.3±
0.1
0.05
0.15±0.05
!Circuit
K
A
A,K
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (DC)
VR
5
V
Forward current (DC)
IF
10
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−40~+125
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminal
CT
∗ Please pay attention to static electricity when handling.
Min.
−
−
−
Typ.
−
−
0.53
Max.
0.35
120
0.80
Unit
Conditions
V
IF=1.0mA
µA VR=5.0V
pF VR=1.0V, f=1.0MHz
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