RB861Y Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB861Y
RB861Y
zApplications
High frequency detection
zExternal dimensions (Unit : mm)
1.6±0.1
0.22±0.05
0.13±0.05
zFeatures
(4)
(3)
1) Ultra small mold type. (EMD4)
2) Low Ct and high detection efficiency.
0～0.1
zConstruction
Silicon epitaxial planar
(1)
(2)
0.5
0.5
1.0±0.1
0.5±0.05
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
zTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
　　　　　 0
zLand size figure (Unit : mm)
0.5
1.0
EMD4
zStructure
0.3±0.1
1.65±0.1
1PIN
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage
V_R
Forward current
I_F
Junction temperature
Tj
Storage temperature
Tstg
(*1) Rating of per diode
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminal
Symbol
V_F
I_R
Ct
Limits
5
10
125
-40 to +125
Min. Typ. Max.
-
-
0.29
-
-
30
-
0.85 1.10
φ0.8±0.1
Unit
V
mA
℃
℃
0.65±0.1
Unit
Conditions
V
I_F=1mA
µA
V_R=1V
pF
V_R=0V , f=1MHz
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