RB851Y_07 Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB851Y
RB851Y
zApplications
High frequency detection
zFeatures
1) Ultra small mold type. (EMD4)
2) Low Ct and high detection efficiency.
zConstruction
Silicon epitaxial planar
zDimensions (Unit : mm)
11.6.6±±0.015
0.22±0.05
(4)
(3)
0.13±0.05
zLand size figure (Unit : mm)
0.5
0～0.1
(1)
(2)
0.5
0.5
1.0±0.1
0.5±0.05
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
zTaping specifications (Unit : mm)
1.0
EMD4
zStructure
4.0±0.1
2.0±0.05
φ1.5±0.1
　　　　　 0
0.3±0.1
1..76±5±0.005.1
1PIN
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Forward current(DC)(*1)
Junction temperature
Storage temperature
Symbol
V_R
I_F
Tj
Tstg
(*1)Rating of per diode
Limits
3
30
125
-40 to +125
φ0.8±0.1
Unit
V
mA
℃
℃
0.65±0.1
zElectrical characteristics (Ta=25°C)
Param eter
Sym bol Min. Typ. Max.
Forward voltage
Revers e current
V_F
-
-
0.46
I_R
-
-
0.7
Capacitance between term inal
Ct
-
0.8
-
Unit
C o n d i ti o n s
V
I_F=1m A
µA
V_R=1V
pF
V_R=0V , f=1MHz
Rev.B
1/2