RB851Y Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB851Y
RB851Y
zApplications
High frequency detection
zFeatures
1) Ultra small mold type. (EMD4)
2) Low Ct and high detection efficiency.
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm) zLand size figure (Unit : mm)
1.6±0.1
0.22±0.05
0.5
0.13±0.05
(4)
(3)
0～0.1
1.0
EMD4
(1)
(2)
0.5
0.5
1.0±0.1
0.5±0.05
zStructure
ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
zTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.1
　　　　　 0
0.3±0.1
1.65±0.1
1PIN
4.0±0.1
φ0.8±0.1
0.65±0.1
zAbsolute maximum ratings (Ta=25°C)
Param eter
Sym bol
Lim its
Unit
Revers e voltage (repetitive peak)
V_R
3
V
Revers e voltage (DC)
I_F
30
mA
Junction tem perature
Tj
125
℃
Storage tem perature
Ts tg
-40 to +125
℃
(*1) Rating of per diode
zElectrical characteristics (Ta=25°C)
Param eter
Sym bol
Min.
Typ. Max.
Forward voltage
Revers e current
V_F
-
-
0.46
I_R
-
-
0.7
Capacitance between term inal
Ct
-
0.8
-
Unit
C o n d i ti o n s
V
I_F=1m A
µA
V_R=1V
pF
V_R=0V , f=1MHz
Rev.A
1/2