RB751VM-40FH Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB751VM-40FH
Application
High speed switching
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
　　　 0.05
Datasheet
AEC-Q101 Qualified
Land size figure (Unit : mm)
0.9M IN .
Features
1) Ultra small mold type.
(UMD2)
2) Low I_R
3) High reliability
Construction
Silicon epitaxial planar
UMD2
Structure
0.3±0.05
0.7±0.2
　　　 0.1
ROHM : UMD2 JEITA : SC-90/A
JEDEC :SOD-323
dot (year week factory)
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ_11_.5.5₅5_±_0.0₀.₅05
Cathode
Anode
0.3±0.1
1.40±0.1
4.0±0.1
φ11..05
Absolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
40
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
30
mA
Forward current surge peak (60Hz・1cyc) I_FSM
200
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
40 to 150
°C
1.0±0.1
Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
- 0.37
Reverse current
I_R
-
- 0.5
Capacitance between terminals
Ct
-
2
-
Unit
Conditions
V I_F=1mA
A ^V_R^=30V
pF V_R=1V , f=1MHz
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.04 - Rev.D