RB751V-40TE-17 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB751V-40
zApplications
Low current rectification
zFeatures
1) Ultra small mold type. (UMD2)
2) Low VF
3) High reliability
zExternal dimensions (Unit : mm)
1.25±0.1
0.1±0.1
　　　 0.05
zConstruction
Silicon epitaxial planar
0.3±0.05
ROHM : UMD2
JEDEC : S0D-323
JEITA : SC-90/A
dot (year week factory)
0.7±0.2
　　　 0.1
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
RB751V-40
zLand size figure
0.9MIN.
UMD2
zStructure
0.3±0.1
1.40±0.1
zAbsolute maximum ratings (Ta=25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current
Forward current s urge peak _（60Hz_・1cyc_）
Junction tem perature
Storage tem perature
Sym bol
V_RM
V_R
Io
I_FSM
Tj
Ts tg
4.0±0.1
φ1.05
Lim its
Unit
40
V
30
V
30
mA
200
mA
125
℃
-40 to +125
℃
1.0±0.1
zElectrical characteristic (Ta=25°C)
Param eter
Forward voltage
Revers e current
Capacitance between term inal
Sym bol Min. Typ. Max.
V_F
-
-
0.37
I_R
-
-
0.5
Ct
-
2
-
Unit
C o n d i ti o n s
V
I_F=1m A
µA
V_R=30V
pF
V_R=1V , f=1MHz
Rev.B
1/3