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RB751SM-40T2R Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode
Data Sheet
Schottky Barrier Diode
RB751SM-40
lApplications
High speed switching
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
lLand size figure (Unit : mm)
0.8
lFeatures
1)Ultra small mold type. (EMD2)
2)High reliability
lConstruction
Silicon epitaxial
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
0.6±0.1
lTaping specifications (Unit : mm)
EMD2
lStructure
lAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
40
V
Reverse voltage (DC)
VR
30
V
Average rectified forward current
Io
30
mA
Forward current surge peak (60Hz・1cyc)
IFSM
200
mA
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-40 to +150
°C
lElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
Reverse current
VF
-
IR
-
-
0.37
-
0.5
Capacitance between terminals
Ct
-
2
-
Unit
Conditions
V
IF=1mA
μA
VR=30V
pF
VR=1V , f=1MHz
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2011.06 - Rev.A