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RB751S-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode | |||
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Data Sheet
Schottky barrier diode
RB751S-40
ï¬Applications
Low current rectification
ï¬Dimensions (Unit : mm)
0.8±0.05
0.12±0.05
ï¬Land size figure (Unit : mm)
0.8
ï¬Features
1) Ultra small mold type. (EMD2)
2) Low VF
3) High reliability
ï¬Construction
Silicon epitaxial planar
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
ï¬Taping specifications(Unit : mm)
4.0±0.1
2.0±0.05
0.6±0.1
Ï1.5±0.05
Ï1.55±0.05
EMD2
ï¬Structure
0.2±0.05
00.9.905±±0.005.06
0
E空mãptã±y pãoãcket 4.0±0.1
2.0±0.05
Ï0.5
ï¬Absolute maximum ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
40
V
Reverse voltage (DC)
VR
30
V
Average retified forward current
Io
30
mA
Forward currnt surge peak(60Hz/1cyc) IFSM
200
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
0.2
00.7.756±±0.005.05
ï¬Electrical characteristics(Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF
-
-
0.37
Reverse current
IR
-
-
0.5
Capacitance between terminals
Ct
-
2
-
Unit
Conditions
V
IF=1mA
μA
VR=30V
pF
VR=1V , f=1MHz
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1/3
2011.03 - Rev.C
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