RB751S-40_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB751S-40
zApplications
Low current rectification
zFeatures
1) Ultra small mold type. (EMD2)
2) Low VF
3) High reliability
zExternal dimensions (Unit : mm)
0.8±0.05
0.12±0.05
zConstruction
Silicon epitaxial planar
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
0.6±0.1
zTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.05
RB751S-40
zLand size figure
0.8
EMD2
zStructure
0.2±0.05
0.95±0.06
0
zAbsolute maximum ratings (Ta=25°C)
Param eter
Sym bol
Revers e voltage (repetitive peak)
V_RM
Revers e voltage (DC)
V_R
Average rectified forward current
Io
Forward current s urge peak _（60Hz_・1cyc_） I_FSM
Junction tem perature
Tj
Storage tem perature
Ts tg
E空mポpケtyッpトocket ^4.0±0.1
Lim its
40
30
30
200
125
-40 to +125
2.0±0.05
φ0.5
Unit
V
V
mA
mA
℃
℃
0.2
0.76±0.05
zElectrical characteristic (Ta=25°C)
Param eter
Sym bol
Min.
Typ. Max.
Forward voltage
Revers e current
Capacitance between term ins ls
V_F
-
-
0.37
I_R
-
-
0.5
Ct
-
2
-
Unit
Conditions
V
I_F=1m A
µA
V_R=30V
pF
V_R=1V , f=1MHz
Rev.B
1/3