RB751S-40 Datasheet, PDF (1/2 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB751S-40 / RB751V-40
RB751S-40 / RB751V-40
!Applications
High speed switching
For Detection
!External dimensions (Units : mm)
RB751S-40
CATHODE MARK
!Features
1) Small surface mounting type.
(EMD2, UMD2)
2) Low reverse current and low
forward voltage.
3) High reliability.
!Construction
Silicon epitaxial planar
ROHM : EMD2
EIAJ : SC-79
JEDEC : SOD-523
RB751V-40
5
0.3±0.05
0.12±0.05
0.8±0.05
0.6±0.1
CATHODE MARK
CATHODE MARK
5
5
0.3±0.05
1.25±0.1
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
0.1
+0.1
−0.05
0.7
+0.2
−0.1
0.3±0.05
1.25±0.1
0.1
+0.1
−0.05
0.7
+0.2
−0.1
∗ There are two different markings.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
40
V
DC reverse voltage
VR
30
V
Mean rectifying current
IO
30
mA
Peak forward surge current ^*
IFSM
200
mA
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
−40~+125
˚C
* 60 Hz for 1
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance between terminals
CT
Note) ESD sensitive product handling required.
Min.
−
−
−
Typ.
−
−
2.0
Max.
0.37
0.5
−
Unit
Conditions
V
IF = 1mA
µA VR = 30V
pF VR = 1V, f = 1MHz