RB751G-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier Diode

Data Sheet
Schottky barrier Diode
RB751G-40
Applications
General rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
0.13±0.03
0.5
0.6±0.05
Features
1) Small power mold type.(VMD2)
2) Low VF
3) High reliability
Construction
Silicon epitaxial planar
0.27±0.03
0.5±0.05
VMD2
Structure
ROHM : VMD2
dot (year week factory)
Taping specifications (Unit : mm)
4±0.1
2±0.05
φ1.5+0.1
　　　　　0
0.18±0.05
0.76±0.1
4±0.1
2±0.05
φ0.5
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
30
mA
Forward current surge peak (60Hz・1cyc)
I_FSM
200
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
0.3
0.65±0.05
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F
-
-
0.37
I_R
-
-
0.5
Capacitance between terminals
Ct
-
2
-
Unit
Conditions
V
I_F=1mA
μA
V_R=30V
pF
V_R=1V , f=1MHz
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2011.05 - Rev.B