RB751G-40 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Schottky barrier Diodes

Diodes
Schottky barrier diode
RB751G-40
RB751G-40
zApplications
General rectification
zFeatures
1) Small power mold type.
(VMD2)
2) Low VF
3) High reliability
zConstruction
Silicon epitaxial planar
zEx_●terna_寸l d_法i_図m_（ensions (U_）nit : mm)
0.6±0.05
0.13±0.03
zLand size figure
0.5
0.27±0.03
0.5±0.05
ROHM : VMD2
dot (year week factory)
zTaping dimensions (Unit : mm)
4±0.1
2±0.05
φ1.5+0.1
　　　　　0
VMD2
zStructure
0.18±0.05
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
0.76±0.1
4±0.1
2±0.05
φ0.5
Limits
Unit
40
V
30
V
30
mA
200
mA
125
℃
-40 to +125
℃
0.3
0.65±0.05
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
V_F
-
-
0.37
I_R
-
-
0.5
Ct
-
2
-
Unit
Conditions
V
I_F=1mA
µA
V_R=30V
pF
V_R=1V , f=1MHz
Rev.B
1/3