RB751CS-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Data Sheet
Schottky barrier diode
RB751CS-40
Applications
Low current rectification
Dimensions (Unit : mm)
Features
1) Ultra Small mold type(VMN2)
2) Low V_F
3) High reliability
0 .6±0.05
0.16±0.05
Land size figure (Unit : mm)
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Structure
Silicon epitaxial planer
0.156
0.35±0.1
0.37±0.03
ROHM : VMN2
dot (year week factory)+day
Structure
Taping dimensions (Unit : mm)
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Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
30
mA
Forward current surge peak(60Hz/1cyc) I_FSM
200
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
Electrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
Capacitance between terminals
V_F
-
0.37
I_R
-
0.5
Ct
-
2
-
Unit
Conditions
V
I_F=1mA
μA
V_R=30V
pF
V_R=1V , f=1MHz
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2011.05 - Rev.A