RB751CS-40_09 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB751CS-40
zApplications
Low current rectification
zFeatures
1) Ultra Small mold type(VMN2)
2) Low V_F
3) High reliability
zDimensions (Unit : mm)
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zStructure
Silicon epitaxial planer
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zLand size figure (Unit : mm)
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zStructure
zTaping dimensions (Unit : mm)
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zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
30
mA
Forward current surge peak(60Hz/1cyc) I_FSM
200
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F
-
I_R
-
0.37
0.5
Capacitance between terminals
Ct
-
2
-
Unit
Conditions
V
I_F=1mA
µA
V_R=30V
pF
V_R=1V , f=1MHz
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2009.12 - Rev.A