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| RB751CS-40T2R Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode | |||
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Schottky Barrier Diode
RB751CS-40
Datasheet
lApplication
Low current rectification
lFeatures
1) Ultra Small mold type
(VMN2)
2) Low VF
3) High reliability
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
0.6±0.05
0.16±0.05
lLand size figure (Unit : mm)
0.55
0.156
0.35±0.1
0.37±0.03
ROHM : VMN2
dot (year week factory)+day
lTaping specifications (Unit : mm)
VMN2
lStructure
Cathode
Anode
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
40
V
Reverse voltage (DC)
VR
30
V
Average rectified forward current
Io
30
mA
Forward current surge peak (60Hzã»1cyc) IFSM
200
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-40 to +125
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF
-
- 0.37
Reverse current
IR
-
- 0.5
Capacitance between terminals
Ct
-
2
-
Unit
Conditions
V IF=1mA
mA VR=30V
pF VR=1V, f=1MHz
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/5
2013.04 - Rev.B
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