RB751CS-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB751CS-40
zApplications
Low current rectification
zFeatures
1) Ultra Small mold type(VMN2)
2) Low VF
3) High reliability
zExternal dimensions (Unit : mm)
0.6±0.05
0.16±0.05
zStructure
Silicon epitaxial planer
0.156
0.35±0.1
0.37±0.03
ROHM : VMN2
dot (year week factory) + day
zTaping dimensions (Unit : mm)
4±0.1
2±0.05
φ1.55
RB751CS-40
zLand size figure (Unit : mm)
0.55
VMD2
zStructure
0.2±0.05
0.7±0.05
2±0.05
4.0±0.1
φ0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F
-
Reverse current
I_R
-
Capacitance between terminals
Ct
-
Limits
40
30
30
200
125
-40 to +125
Typ. Max.
Unit
0.37
V
0.5
µA
2
-
pF
0.52
Unit
V
V
mA
mA
℃
℃
Conditions
I_F=1mA
V_R=30V
V_R=1V , f=1MHz
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