RB731UT108 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB731U
RB731U
zApplications
Low current rectification
zFeatures
1) Small mold type. (SMD6)
2) Low IR
3) High reliability
zConstruction
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
r
r

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r
ޓޓޓ
zLand size figure (Unit : mm)
㪈㪐
㪇㪅㪐㪌 㪇㪅㪐㪌
㪇㪅㪍
㪇㪅㪋㪌 㪇㪅㪊㪌 㪇㪅㪊㪌 㪇㪅㪋㪌



r


㨪
r
r

㪪㪤㪛㪍
zStructure _ã©·
㪩 㪦 㪟㪤㩷㪑㩷㪪 㪤㪛㪍
㪡㪜㪛㪜㪚㩷㪑㪪 㪇 㪫㪄 㪋 㪌 㪎
㪡㪜㪠 㪫㪘 㩷㪑㩷㪪 㪚㪄 㪎 㪋
㫎㪼 㪼 㫂㩷㪺 㫆 㪻㪼
㪈 㪧 㫀㫅 㩷㪤㪸㫉㫂
zTaping specifications (Unit : mm)
㪋㪅㪇㫧㪇㪅㪈
㪉㪅㪇㫧㪇㪅㪇㪌
㱢㪈㪅㪌㪌㫧㪇㪅㪈
䇭䇭䇭䇭䇭㩷㩷㪇
㪇㪅㪏㪤㪠㪥㪅
㪇㪅㪊㫧㪇㪅㪈
㪊㪅㪉㫧㪇㪅㪈
㪋㪅㪇㫧㪇㪅㪈
㱢㪈㪅㪇㪌㪤㪠㪥
zAbsolute maximum ratings (Ta=25qC)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60HzÌ 1cyc)
Junction temperature
Storage temperature
(*1)Per chip̡Io/3
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
Limits
40
40
30
200
125
-40 to +125
㪈㪅㪊㪌㫧㪇㪅㪈
Unit
V
V
mA
mA
㷄
㷄
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
Forward voltage
Reverseu current
V_F
-
I_R
-
-
0.37
V I_F=1mA
-
1
μA V_R=10V
Capacitance between terminals
Ct
-
2.0
-
pF V_R=1V , f=1MHz
Rev.B
1/3