RB731U Datasheet, PDF (1/2 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB731U
RB731U
!Applications
High speed switching.
!Features
1) Small surface mounting type. (SMD6)
2) Low VF and low IR.
3) Three diodes in parallel for easy installation.
!Construction
Silicon epitaxial planar
!Circuit
!External dimensions (Units : mm)
2.9±0.2
1.9±0.2
0.95 0.95
0.3
+0.1
−0.05
ROHM : SMD6
EIAJ : SC-74
JEDEC : SOT-457
1.1
+0.2
−0.1
0.8±0.1
0∼0.1
0.15
+0.1
−0.06
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
40
V
DC reverse voltage
VR
40
V
Mean rectifying current
IO
30
mA
Peak forward surge current^∗
IFSM
200
mA
Junction temperature
Tj
125
˚C
Storage temperature
Tstg
−40∼+125
˚C
∗ 60 Hz for 1
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF
−
−
0.37
V
IF=1mA
Reverse current
IR
−
−
1
µA VR=10V
Capacitance between terminals
CT
−
2.0
−
pF VR=1V, f=1MHz
Note) ESD sensitive product handling required.