RB721Q-40 Datasheet, PDF (1/4 Pages) Diodes Incorporated – Schottky barrier diode

Diodes
Schottky barrier diode
RB721Q-40
RB721Q-40
zApplications
Low current rectification
zExternal dimensions (Unit : mm)
CATHODE BAND (BLACK)
TYPE NO. (BLACK)
zFeatures
1) Glass sealed envelope. (MSD)
2) Low VF, Low IR
3) High reliability
29±1
S
2
-
2.7±0.3
φ0.4±0.1
29±1
ROHM : MSD
JEDEC : DO-34
φ1.8±0.2
zConstruction
Silicon epitaxial planar
zTaping specification s (Unit : mm)
H2
A
BLUE
L1
H1
G1
G2
E
L2
F
IVORY
H2
M記a号rk
St^寸and^法ard ^規dim^格ensi^値on
value (m(mm)m)
I
T-72 52.4±1.5
Ａ T-77 26.0+0.4
'-0
B
ï¼¢
5.0±0.5
ï¼£
0.5ＭＡＸ
C
Ｄ
0
ï¼¥
50.4±0.4
Ｆ
0.3ＭＡＸ
G1
0.1ＭＩＮ
G2
0ＭＩＮ
H1
6.0±0.5
H2
5.0±0.5
I
0.5ＭＡＸ
L1-L2 0.6ＭＡＸ
t
3.2MIN
H1
D
t
＊H2(6mm)：BROWN
cf : cum_注u₎l_　at_ç´¯iv _積e p_ピit_ッch_チto_のle_許ra_容nc_å·®e w_はit₂h₀2_ピ0_ッp_チitc_でh _±tha_1.n_5m±1_m._以5m_下m_{とする}
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Forward voltage
V_F
-
Reverse current
I_R
-
Capacitance between terminals
Ct
-
Limits
40
40
30
200
125
-40 to +125
Typ. Max.
Unit
-
0.37
V
-
0.5
µA
2.0
-
pF
Unit
V
V
mA
mA
℃
℃
Conditions
I_F=1mA
V_R=25V
V_R=1V , f=1MHz
Rev.A
1/3