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| RB717F_08 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode | |||
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Diodes
Schottky barrier diode
RB717F
RB717F
zApplications
Low current rectification
zFeatures
1) Small mold type. (UMD3)
2) Low VF
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
r
r
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r
ã§ã§ ã§ã§
r
㨪
r
r
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㪡ãªãªãªãªã©·ãªã©·ãªªãª¦ãª«ãªãªãªãª
㪡ãªãª 㪫ãªã©·ãªã©·ãªªãªãªãªãª
㪻ã«ã«ã©·ã©¿ã«ãª¼ãª¸ã«ã©·ã«ãª¼ãª¼ã«ã©·ãª½ãª¸ãªºã«ã«ã«ã«ãª
z Taping specifications (Unit : mm)
ãªãª
ãªã«§ãªãª
ãª
ãªãª
ãªã«§ãªãª
ãªãª
ã±¢ãªãª
ãªãªã«§ãªãª
ãªãª
z Land size figure (Unit : mm)
ãªãª
ãª
ãªãª
ãªãª
ãªãª
ãªãª¤ãª 㪥
㪬㪤ãªãª
zStructure ã©·
ãªãª
ãªã«§ãªãª
ãª
ãªãª
ãªãªã«§ãªãª
ãª
ääääã©·ãª
zAbsolute maximum ratings (Ta=25qC)
Parameter
Reverse voltage (repetitive peak)
Reevrse voltage (DC)
Average rectifoed forward currentÍ*1Í
Forward current surge peak ä¨60Hzä¶1cycä©ä¨*1ä©
Junction temperature
Storage temperature
(*1) Rating of per diode
ãªãª
ãªã«§ãªãª
ãª
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
ã±¢ãªãª
ãªã«§ãªãª
ãªãª
Limits
40
40
30
200
125
-40 to +125
ãªãª
ãªãªã«§ãªãª
ãª
Unit
V
V
mA
mA
ã·
ã·
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF
-
- 0.37
Reverse current
IR
-
-
1
Capacitance between terminals
Ct
-
2.0
-
Unit
Conditions
V
IF=1mA
μA
VR=10V
pF
VR=1V,f=1MHz
Rev.B
1/3
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