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RB717FT106 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode | |||
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Diodes
Schottky barrier diode
RB717F
RB717F
zApplications
Low current rectification
zFeatures
1) Small mold type. (UMD3)
2) Low VF
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
r
r
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z Taping specifications (Unit : mm)
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z Land size figure (Unit : mm)
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zStructure ã©·
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zAbsolute maximum ratings (Ta=25qC)
Parameter
Reverse voltage (repetitive peak)
Reevrse voltage (DC)
Average rectifoed forward currentÍ*1Í
Forward current surge peak ä¨60Hzä¶1cycä©ä¨*1ä©
Junction temperature
Storage temperature
(*1) Rating of per diode
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Symbol
VRM
VR
Io
IFSM
Tj
Tstg
ã±¢ãªãª
ãªã«§ãªãª
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Limits
40
40
30
200
125
-40 to +125
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ãªãªã«§ãªãª
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Unit
V
V
mA
mA
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zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF
-
- 0.37
Reverse current
IR
-
-
1
Capacitance between terminals
Ct
-
2.0
-
Unit
Conditions
V
IF=1mA
μA
VR=10V
pF
VR=1V,f=1MHz
Rev.B
1/3
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