RB717F Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB717F
RB717F
zApplications
Low current rectification
zFeatures
1) Small mold type. (UMD3)
2) Low V_F
3) High reliability.
zConstruction
Silicon epitaxial planar
z External dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各リードとも
Ea_同ch_寸le_法ad has same dimension
(3)
0.15±0.05
(2)
（0.65） （0.65）
1.3±0.1
0～0.1
(1)
0.7±0.1
0.9±0.1
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
z Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
z Land size figure (Unit : mm)
1.3
0.65
0.8MIN
UMD3
zStructure
0.3±0.1
2.25±0.1
　　　　 0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reevrse voltage (DC)
Average rectifoed forward current（*1）
Forward current surge peak （60Hz・1cyc）（*1）
Junction temperature
Storage temperature
(*1) Rating of per diode
4.0±0.1
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
φ0.5±0.05
Limits
40
40
30
200
125
-40 to +125
1.25±0.1
Unit
V
V
mA
mA
℃
℃
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
- 0.37
Reverse current
I_R
-
-
1
Capacitance between terminals
Ct
-
2.0
-
Unit
Conditions
V
I_F=1mA
µA
V_R=10V
pF
V_R=1V,f=1MHz
Rev.B
1/3