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RB715WFH Datasheet, PDF (1/6 Pages) Rohm – Shottky barrier diode | |||
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Data Sheet
Shottky barrier diode
RB715WFH
ï¬Applications
Low current rectification
ï¬Features
1) Ultra small power mold type. (EMD3)
2) Low IR
3) High reliability.
ï¬Construction
Silicon epitaxial planar
ï¬Dimensions (Unit : mm)
1.6± 0.2
0.3±0.1
ããã 0.05
(3)
0.15±0.05
0 .2± 0.1
(2)
(1)
ãã- 0.05
0.5 0.5
1.0±0.1
0ï½0.1
0.55±0.1
0.7±0.1
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
ï¬Taping specifications (Unit : mm)
4.0±0.1
2.0±0.05
ÏÏ1.15.55±ï«00..1
ãããããï00
AEC-Q101 Qualified
ï¬Land size figure (Unit : mm)
1.0
0.5 0.5
0.7
0.6 0.6
EMD3
ï¬Structure
0.3±0.1
1.8±0.1
Ï0.5±0.1
0.9±0.2
ï¬Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
40
V
Reverse voltage (DC)
VR
40
V
Average rectified forward current
Io
30
mA
Forward current surge peak (60Hzã»1cyc) (*1) IFSM
200
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
ï40 to ï«125
°C
(*1) Rating of per diode
ï¬Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
VF
-
- 0.37
IR
-
-
1
Ct
-
2.0
-
Unit
Conditions
V
IF=1mA
μA
VR=10V
pF
VR=1.0V f=1.0MHz
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2011.04 - Rev.C
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