RB715W Datasheet, PDF (1/3 Pages) Rohm – Schottky barrier diode

Diodes
Shottky barrier diode
RB715W
RB715W
zApplication
Low current rectification
zFeatures
1) Ultra small mold type. (EMD3)
2) Low VF
3) High reliability.
zConstruction
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
1.6±0.2
0.3±0.1
　　　 0.05
(3)
0.15±0.05
0.2±0.1
(2)
(1)
　　-0.05
0.5 0.5
1.0±0.1
0～0.1
0.55±0.1
0.7±0.1
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory)
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
　　　　　 0
zLead size figure (Unit : mm)
1.0
0.5 0.5
0.7
0.6 0.6
EMD3
zStructure
0.3±0.1
1.8±0.1
φ0.5±0.1
0.9±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward current
Io
30
mA
Forward current surge peak (60Hz・1cyc) (*1) I_FSM
200
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
(*1)Rating of per diode
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
Capacitance between terminals
V_F
-
- 0.37
I_R
-
-
1
Ct
-
2.0
-
Unit
Conditions
V
I_F=1mA
µA
V_R=10V
pF
V_R=1.0V f=1.0MHz
Rev.B
1/3