RB715F_08 Datasheet, PDF (1/4 Pages) Rohm – Shottky barrier diode

Diodes
Shottky barrier diode
RB715F
RB715F
zApplication
Low current rectification
zFeatures
1) Small mold type. (UMD3)
2) Low VF
3) High reliability.
zConstruction
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
r
r
ฦ_Ea࡝_ch࡯_le࠼_adߣ_ha߽_{s same dimension}
หኸᴺ

r

㧔㧕 㧔㧕
r
㨪

r
r
㪩㪦㪟㪤㩷㪑㩷㪬㪤㪛㪊
㪡㪜㪛㪜㪚㩷㪑㩷㪪㪦㪫㪄㪊㪉㪊
㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪎㪇
㪻㫆㫋㩷㩿㫐㪼㪸㫉㩷㫎㪼㪼㫂㩷㪽㪸㪺㫋㫆㫉㫐㪀
zTaping dimensions (Unit : mm)
㪋㪅㪇㫧㪇㪅㪈
㪉㪅㪇㫧㪇㪅㪇㪌
㱢㪈㪅㪌㪌㫧㪇㪅㪇㪌
zLead size figure (Unit : mm)
㪈㪅㪊
㪇㪅㪍㪌
㪇㪅㪏㪤㪠㪥㪅
㪬㪤㪛㪊
zStructure _ã©·
㪇㪅㪊㫧㪇㪅㪈
㪉㪅㪉㪌㫧㪇㪅㪈
䇭䇭䇭䇭㩷㪇
zAbsolute maximum ratings (Ta=25qC)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60HzÌ 1cyc) (*1)
Junction temperature
Storage temperature
(*1)Rating of per diode
㪋㪅㪇㫧㪇㪅㪈
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
㱢㪇㪅㪌㫧㪇㪅㪇㪌
Limits
40
40
30
200
125
-40 to +125
Unit
V
V
mA
mA
㷄
㷄
㪈㪅㪉㪌㫧㪇㪅㪈
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Sfwfstf!dvssfou
V_F
-
- 0.37
I_R
-
-
1
Capacitance between terminals
Ct
-
2.0
-
Unit
Conditions
V
IF=1mA
μA VR=10V
pF VR=1V f=1MHz
Rev.B
1/3