RB715FT106 Datasheet, PDF (1/6 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB715F
Datasheet
lApplication
Low current rectification
lFeatures
1) Small mold type. (UMD3)
2) Low V_F
3) High reliability.
lConstruction
Silicon epitaxial planar
lDimensions (Unit : mm)
2.0±0.2
0.3±0.1
各_Eaリ_chー_leド_adと_haも_{s same dimension}
同寸法
(3)
0.15±0.05
lLand size figure (Unit : mm)
1.3
0.65
(2)
(1)
（0.65） （0.65）
1.3±0.1
ROHM : UMD3
JEDEC :SOT-323
JEITA : SC-70
dot (year week factory)
0～0.1
0.7±0.1
0.9±0.1
lTaping specifications (Unit : mm)
4.0±0.1
2.0±0.05
φ 1.55±0.05
f1.550.05
UMD3 0.8MIN.
lStructure
cathode
anode anode
0.3±0.1
2.25±0.1
　　　　 0
4.0±0.1
fφ00.5.5±0.00.055
1.25±0.1
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
V_RM
40
Reverse voltage (DC)
V_R
40
Average rectified forward current
Io
30
Forward current surge peak (60Hz・1cyc) (*1) I_FSM
200
Junction temperature
Tj
125
Storage temperature
(*1) Rating of per diode
Tstg
-40 to +125
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
V_F
-
- 0.37
Reverse current
I_R
-
-
1
Capacitance between terminals
Ct
- 2.0 -
Unit
V
V
mA
mA
°C
°C
Unit
Conditions
V I_F=1mA
mA ^V_R^=10V
pF V_R=1V f=1MHz
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2013.04 - Rev.C