RB715F Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Shottky barrier diode
RB715F
RB715F
zApplication
Low current rectification
zFeatures
1) Small mold type. (UMD3)
2) Low VF
3) High reliability.
zConstruction
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各_Eaリ_chー_leド_adと_haも_{s same dimension}
同寸法
(3)
0.15±0.05
(2)
（0.65） （0.65）
1.3±0.1
0～0.1
(1)
0.7±0.1
0.9±0.1
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
zTaping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
zLead size figure (Unit : mm)
1.3
0.65
0.8MIN.
UMD3
zStructure
0.3±0.1
2.25±0.1
　　　　 0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
(*1)Rating of per diode
4.0±0.1
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
φ0.5±0.05
Limits
40
40
30
200
125
-40 to +125
Unit
V
V
mA
mA
℃
℃
1.25±0.1
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F
-
- 0.37
I_R
-
-
1
Capacitance between terminals
Ct
-
2.0
-
Unit
Conditions
V
IF=1mA
µA VR=10V
pF VR=1V f=1MHz
Rev.B
1/3