RB706WM-40 Datasheet, PDF (1/8 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB706WM-40
Data Sheet
lApplication
High speed switching
lFeatures
1) Small mold type
(EMD3F)
2) High reliability
3) Super low V_F
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
1.60±0.1
0.70±0.10
0.26
+0.10
-0.05
Each lead has
same dimensions
(3)
lLand Size Figure (Unit : mm)
0.5 0.5
0.7
3J
(1)
(2)
(0.5) (0.5)
1.00±0.10
ROHM : EMD3F
JEDEC : SOT-416FL
JEITA : SC-89
: Year, week and factory
0～0.10
EMD3F ^0.6
0.6
lStructure
(3)
(1) Anode
(2) Cathode
(3) Cathode/
(1)
(2)
Anode
lTaping Dimensions (Unit : mm)
TL
lAbsolute Maximum Ratings (T_c= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
45
V
Reverse voltage
V_R
Direct reverse voltage
40
V
Average forward rectified current
I_O
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, per diode
30
mA
Non-repetitive forward surge current I_FSM
60Hz half sin wave,non-repetitive at T_a=25ºC,
1cycle, per diode
0.2
A
Operating Junction Temperature
T_j
-
125
°C
Storage temperature
T_stg
-
-55 to +125 °C
lElectrical Characteristics (T_j= 25°C)
Parameter
Symbol
Forward voltage
V_F
Reverse current
I_R
Capacitance between terminals
C_t
Conditions
I_F=1mA
V_R=30V
V_R=1V, f=1MHz
Min. Typ. Max. Unit
-
- 0.37 V
-
- 0.5 mA
- 1.4 - pF
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2016.06 - Rev.A