 English |
|
|
|
|
|
|
|
| RB706F-40_08 Datasheet, PDF (1/4 Pages) Rohm – Shottky barrier diode | |||
| |||
|
Diodes
Shottky barrier diode
RB706F-40
RB706F-40
zApplication
Low current rectification
zFeatures
1) Small mold type. (UMD3)
2) Low VF
3) High reliability.
zStructure
Silicon epitaxial planer
zExternal dimensions (Unit : mm)
r
r
ฦà¡à¡¯à ¼ß£ß½
Eaหchá¸leá´ºad has same dimension
r
㨪
ã§ã§ ã§ã§
r
r
r
㪩㪦ãªãª¤ã©·ãªã©·ãª¬ãª¤ãªãª
㪡ãªãªãªãªã©·ãªã©·ãªªãª¦ãª«ãªãªãªãª
㪡ãªãª 㪫ãªã©·ãªã©·ãªªãªãªãªãª
㪻ã«ã«ã©·ã©¿ã«ãª¼ãª¸ã«ã©·ã«ãª¼ãª¼ã«ã©·ãª½ãª¸ãªºã«ã«ã«ã«ãª
zTaping dimensions (Unit : mm)
ãªãª
ãªã«§ãªãª
ãª
ãªãª
ãªã«§ãªãª
ãªãª
ã±¢ãªãª
ãªãªã«§ãªãª
ãªãª
zLead size figure (Unit : mm)
ãªãª
ãª
ãªãª
ãªãª
ãªãª
ãªãª¤ãª 㪥
㪬㪤ãªãª
zStructure ã©·
ãªãª
ãªã«§ãªãª
ãª
ãªãª
ãªãªã«§ãªãª
ãª
ääääã©·ãª
ãªãª
ãªã«§ãªãª
ãª
ã±¢ãªãª
ãªã«§ãªãª
ãªãª
ãªãª
ãªãªã«§ãªãª
ãª
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
VRM
45
V
Reverse voltage (DC)
VR
40
V
Average rectified forward current
Io
30
mA
Forward current surge peak (60HzÌ 1cyc) IFSM
200
mA
Junction temperature
Tj
125
ã·
Storage temperature
Tstg
-40 to +125
ã·
zElectrical characteristics (Ta=25qC)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF
-
0.26 0.37
Reverse current
IR
-
0.05 1
Capacitance between terminals
Ct
-
2.0
-
Unit
Conditions
V
IF=1mA
μA
VR=10V
pF
VR=1V , f=1MHz
Rev.A
1/3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese